SYSTEM CONFIGURATION  •  Direct Drive Roughing Pump  •  Light Pole  •  System Software  •  Elevator Subsystem  •  Computer  •  Network Analyzer  •  Cryo Pump  •  Ion Gun  6300238-00  FACILITY REQUIREMENTS  •  Power: 208VAC  3-Phase, 7KVA, 50/60 Hz  •   Inlet Pressure: 90-100 PSIG
Air: 90 - 100 PSIG
Nitrogen: 70 - 100 PSIG
Process Gas: 10 PSIG
Dimensions W 53" x D 37" x H 88"  Software screen measurements

 Throughput:  Device Dependent  S&A  5911 SAW WAFER FREQUENCY  ADJUSTMENT SYSTEM          SPECIFICATIONS  •  Elevator subsystem continuously handles two
magazines  •  Each magazine holds five transport boats  •  Transport boat carries two 100 mm wafers  •  Wafers are continuously loaded, etched, and
unloaded  •  User specified etching times are communicated to
the system via network,  RS-232 or floppy disk in a
text file format  •  Selective Ion Beam etching of 100 mm wafers
to improve SAW final frequency distribution  •  Wafer is divided into 256 etching areas.  Each
area is etched for a user specified time  •  Continuous wafer motion during the etching
process provides a smooth etching profile  •  Frequency change is made by etching the
wafer material at a much faster rate than the
aluminum electrodes  Transport Boat  (bottom view)