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Gallium nitride (GaN) wafers are manufactured from truly bulk material grown by a highly developed ammonothermal process, and are commonly used in laser, LED and transistor products
Our products are characterized by a perfect crystalline quality. Technological breakthroughs in growth technology have resulted in the production of up to 2-inch diameter high quality
bulk c-plane GaN substrates as well as non-polar M-plane, A-plane and semi-polar GaN wafers. These substrates are intended for use in the production of light emitting diodes (LEDs), optoelectronics devices such as green and blue lasers, and high electron mobility transistors (HEMTs).
The substrates are strain free, their crystal lattice is extremely flat and their dislocation density is two orders of magnitude lower than that produced using other technologies. The perfect quality of our GaN is also emphasized by a very high electrical carrier concentration. Leading to a substantial reduction of energy consumption, these products are seen as enablers for breakthroughs in high-power electronic and solid state lighting
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n-type |
p-type |
Semi-insulating |
n [cm-3] |
up to 1019 |
- |
- |
p [cm-3] |
- |
up to 1018 |
- |
ρ [cm-3] |
10-3-10-2 |
102-103 |
109-1012 |
μ [cm2/Vs] |
up to 150 |
- |
- |
Total Thickness Variation (TTV)/µm |
<40 |
<40 |
<40 |
Bow/µm |
≤10 |
≤10 |
≤10 |
FWHM [arcsec] of X-ray rocking curve, epi-ready surface, at 100 μm x 100 μm slit |
<20 |
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Dislocation Density [cm-2] |
<105 |
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Misorientation/deg |
On demand |
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Surface Finish |
As cut / ground Roughly polished Optically polished (RMS < 3 nm) Epi-ready (RMS < 0.5 nm) |
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Smaller Curvature |
Fewer Dislocations |
More Electrical Carriers |
Lasers |
Higher Yields |
Lower threshold voltage |
Higher power |
LEDs |
Better efficiency (IQE) |
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Transistors |
Lower leakage current |
Higher power |
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Contact us by email or by phone, +44 20 7819 8080, to discuss how gallium nitride will help with your latest developments