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Sapphire Ingot or Boule

 

Properties

Sapphire Boule - 6 Inch as Grown C-Axis
 
Chemical Composition
Al2O3
Crystal growth method
Czochralski
Crystal structure
Symmetrical rhombohedral
Lattice
a=b=4.77 c=13.04
Melting point
2050 °C
Density
3.98 g/cm3
Hardness
9 moh

Transmission wavelength region
150-5500 nm
Sapphire boule

The Czochralski method of crystal growth - advantages :

Sapphire boules are a base material for semiconductor manufacture, and are used in optical component manufacture

Uses
Semiconductor manufacture Optical Components Other uses
Carrier wafers Windows Vapour deposition material
Bearings Laser cap Polishing powder
Pipes Optic lens Analysis cell
LED    

Transmissivity of wafers

Sapphire transmissivity graph 1 Sapphire transmissivity graph 2  

 



Ingot Specification (4 inch, C-Axis)
Length
X>50mm
Diameter
100.2 mm ±0.1mm
Primary Orientation Flat Length
30 ±0.5mm
Surface Orientation

C-Plane (0001), 0° ±0.1° in m-axis (1-100)
C-Plane (0001), 0° ±0.1° in a-axis (11-20)
Primary Orientation Flat
A-Plane (1120),0 0° ±0.2°
Angle between each surface and Primary flat
90° ±1°
Sapphire Boule - Purity
Purity
99.995%
 
ppm
Ti
0.8
Ca
<2
Si
3
Fe
2
Mg
0.07
Na
0.2
Cu
<5
Ga
-
Cr
0.9
Ni
<0.1
Mn
<0.1
Cu
<5
Zr
<0.1